IndiumV3, Main, Repository, bibRecord, 00A594

Efficient electron spin detection with positively charged quantum dots

Identifieur interne : 00A594 ( Main/Repository ); précédent : 00A593; suivant : 00A595

Efficient electron spin detection with positively charged quantum dots

Auteurs : RBID : Pascal:04-0166665

Descripteurs français

Pascal (Inist)
- 7321L, 7847, 7855C, 7220J, Etude expérimentale, Indium composé, Semiconducteur III-V, Point quantique semiconducteur, Autoassemblage, Spin électronique, Piège électron, Piège trou, Etat fondamental, Temps relaxation porteur charge, Durée vie porteur charge, Recombinaison électron trou, Photoluminescence, Spectre résolution temporelle.

English descriptors

KwdEn :
- Carrier lifetime, Carrier relaxation time, Electron spin, Electron traps, Electron-hole recombination, Experimental study, Ground states, Hole traps, III-V semiconductors, Indium compounds, Photoluminescence, Self-assembly, Semiconductor quantum dots, Time resolved spectra.

Abstract

We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode spin detectors for spintronics applications. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Gundogdu, K" uniqKey="Gundogdu K">K. Gundogdu</name>
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<wicri:cityArea>Department of Physics and Astronomy and Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea>
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<author><name sortKey="Hall, K C" uniqKey="Hall K">K. C. Hall</name>
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<author><name sortKey="Boggess, Thomas F" uniqKey="Boggess T">Thomas F. Boggess</name>
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<author><name sortKey="Deppe, D G" uniqKey="Deppe D">D. G. Deppe</name>
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<author><name sortKey="Shchekin, O B" uniqKey="Shchekin O">O. B. Shchekin</name>
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<front><div type="abstract" xml:lang="en">We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode spin detectors for spintronics applications. © 2004 American Institute of Physics.</div>
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Efficient electron spin detection with positively charged quantum dots

Efficient electron spin detection with positively charged quantum dots

Descripteurs français

English descriptors

Abstract

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